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RA03M8087M-101 Mosfet Power Transistor For Portable Radio H46S Package

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Shenzhen Koben Electronics Co., Ltd.

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RA03M8087M-101 Mosfet Power Transistor For Portable Radio H46S Package

Name: RA03M8087M101 Mosfet Power Transistor For Portable Radio H46S Package
Brand: Mitsubishi
Price: 1 USD

Brand Name : Mitsubishi

Model Number : RA03M8087M-101

Certification : IEC

Place of Origin : JP

MOQ : 1 piece

Price : negotiable

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10000 pieces per year

Delivery Time : 1-2 working days

Packaging Details : factory standard packing

Condition : 100% Brand New Product

Part Status : Active

Package : H46S

Lead Free Status / RoHS Status : Compliant

Output Power : 3.6W

Voltage : 7.2V

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RA03M8087M-101 806-870MHz 3.6W 7.2V, 2 Stage Amp. RF Power Transistor For PORTABLE RADIO

Description

The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power

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RA03M8087M-101 Mosfet Power Transistor For Portable Radio H46S Package

Product Tags:

n channel mosfet transistor

n channel transistor

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