MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral

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Shenzhen Koben Electronics Co., Ltd.

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MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral

Name: MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral
Brand: Freescale
Price: 1 USD

Brand Name : Freescale

Model Number : MRF6V2150NBR1

Certification : IEC

Place of Origin : USA

MOQ : 1 piece

Price : negotiable

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10000 pieces per year

Delivery Time : 1-2 working days

Packaging Details : factory standard packing

Drain source voltage : 110Vdc

Gate source voltage : 12V

Operating Junction Temperature : 225°C

Case Operating Temperature : 150°C

Storage temperature : -65 to +165°C

Voltage : 50V

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MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.

Manufacturer	USA Inc.
Series	-
Packaging	Tape & Reel (TR)
Part Status	Not For New Designs
Transistor Type	LDMOS
Frequency	220MHz
Gain	25dB
Voltage - Test	50V
Current Rating	-
Noise Figure	-
Current - Test	450mA
Power - Output	150W
Voltage - Rated	110V
Package / Case	TO-272BB
Supplier Device Package	TO-272 WB-4
Base Part Number	MRF6V2150

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Product Tags:

high power mosfet transistors

n channel mosfet transistor

China MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral wholesale

MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral Images

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