RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

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Shenzhen Koben Electronics Co., Ltd.

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Name: RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
Brand: Mitsubishi
Price: 1 USD

Brand Name : Mitsubishi

Model Number : RD06HVF1

Certification : CE

Place of Origin : CN

MOQ : 50 pieces

Price : negotiable

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10Kpcs per year

Delivery Time : 1-2 working days

Packaging Details : plastic tube

Goods Condition : Brand New

Part Status : Active

Lead Free / Rohs : Complaint

Function : amp

Mounting Type : throught hole

Package : TO220

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RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications

Description of RD06HVF1

RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications

FEATURES of RD06HVF1

High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

APPLICATION of RD06HVF1

For output stage of high power amplifiers in VHF band mobile radio sets.

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Product Tags:

high power mosfet transistors

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