IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
55V |
| Current - Continuous Drain (Id) @ 25°C |
110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
8 mOhm @ 62A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
146nC @ 10V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
3247pF @ 25V |
| FET Feature |
- |
| Power Dissipation (Max) |
200W (Tc) |
| Operating Temperature |
-55°C ~ 175°C |
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N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB IRF3205PBF Images
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